Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jian-Ying Chen"'
Publikováno v:
Chinese Physics B. 28:128101
NH3-plasma treatment is used to improve the quality of the gate dielectric and interface. Al2O3 is adopted as a buffer layer between HfO2 and MoS2 to decrease the interface-state density. Four groups of MOS capacitors and back-gate transistors with d
Publikováno v:
Chinese Physics Letters. 36:037301
Publikováno v:
Chinese Physics B; Nov2019, Vol. 28 Issue 12, p1-1, 1p
Publikováno v:
Chinese Physics Letters; Mar2019, Vol. 36 Issue 3, p1-1, 1p