Zobrazeno 1 - 2
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pro vyhledávání: '"Wang, Ran"'
Publikováno v:
Chinese Physics B. 23:046804
We propose a modified thermal oxidation method in which an Al2O3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeOx interfacial layer, and obtain a superior Al2O3/GeOx/Ge gate stack. The GeOx interfacial layer is formed
Autor:
Le, Han, Sheng-Kai, Wang, Xiong, Zhang, Bai-Qing, Xue, Wang-Ran, Wu, Yi, Zhao, Hong-Gang, Liu
Publikováno v:
Chinese Physics B; Apr2014, Vol. 23 Issue 4, p046804-046809, 6p