Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Lin Gu"'
Publikováno v:
Chinese Physics Letters. 13:768-771
The dependence of optical interface phonon on structure was demonstrated for thin layer inserted GaAlAs quantum well structures. It was found that the dispersion is sensitive to the Al-content of the inserted layer but almost independent of the posit
Publikováno v:
Journal of Physics D: Applied Physics. 47:165101
We demonstrate two GaAs/AlGaAs-based terahertz (THz) quantum well photo-detectors (QWPs), with one-dimensional (1D) metal grating and 45? facet light coupling configurations. The two THz QWPs have the same multi-quantum well structure parameters. The
Publikováno v:
Journal of Physics D: Applied Physics. 47:105303
Strain induced nanoscale structural transformation is demonstrated in this paper to have the ability of triggering polarity flipping in a wide bandgap system of MgxZn1−xO/MgO/Al2O3. Relaxation dynamics of semiconductor components under large compre
Autor:
Lin Gu, Zhenzhong Yang, Guozhen Yang, Haizhong Guo, Kuijuan Jin, Guangsheng Fu, Huibin Lu, Meng He, Le Wang, Shufang Wang, Chen Ge, Can Wang
Publikováno v:
EPL (Europhysics Letters). 103:47006
Epitaxial heterostructures constructed from the thermoelectric cobalt Bi2Sr2Co2Oy thin films and SrTiO3 as well as SrTi0.993Nb0.007O3 substrates were fabricated by pulsed-laser deposition. The scanning transmission electron microscopy results confirm