Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Wei Yu"'
Publikováno v:
Japanese Journal of Applied Physics. 62:031002
Preparing large areas of graphene on textured silicon is necessary for the industrialization of graphene/silicon solar cells. However, many passivation films with insulating properties prepared by the solution method are not applicable for the textur
Autor:
Sankalp Kumar Singh, Hung Wei Yu, Venkatesan Nagarajan, Pragyey Kumar Kaushik, Edward Yi Chang, Ramesh Kumar Kakkerla, Deepak Anandan, Ankur Gupta
Publikováno v:
Engineering Research Express. 2:035004
Autor:
Burhanuddin Yeop Majlis, Chang Fu Dee, Ramesh Kumar Kakkerla, Edward Yi Chang, Deepak Anandan, Sankalp Kumar Singh, Hung Wei Yu, Ching-Ting Lee
Publikováno v:
Applied Physics Express. 12:015502
Ultralow-contact-resistance graphene field-effect transistors fabricated with P-type solution doping
Autor:
Wei-Yu Cheng, Chih-I Wu, Shang-Yi Liu, Chia-Shuo Li, Ang Sheng Chou, Kuo-You Huang, Mon-Shu Ho, Chin-Li Hung
Publikováno v:
Applied Physics Express. 11:075102
We developed a polymer-free (PF) transfer method and examined the optimum annealing temperature and time for the polymer-free graphene to improve the graphene–metal contact. To further tune the work function of graphene to reduce contact resistance
Publikováno v:
Japanese Journal of Applied Physics. 57:04FE14
Publikováno v:
Japanese Journal of Applied Physics. 47:2324-2329
Fuel cells, particularly direct methanol fuel cells (DMFCs), have great potential as mobile power sources. It has been extensively reported that the DMFC performance strongly depends on the electrode catalyst, and many research groups have focused on
Autor:
Edward Yi Chang, Quang Ho Luc, Hung Wei Yu, Minh Thien Huu Ha, Tuan Anh Nguyen, Sa Hoang Huynh, Huy Binh Do
Publikováno v:
Applied Physics Express. 10:075505
Publikováno v:
Japanese Journal of Applied Physics. 56:04CE03
In this paper, we present a new differential multiple-time-programmable (MTP) memory cell with a novel slot contact coupling structure in the fin field-effect transistor (FinFET) CMOS process. This MTP cell contains a pair of floating metal gates to
Publikováno v:
Japanese Journal of Applied Physics. 47:8730-8732
AlGaN/GaN strained layer superlattice (SLS) structures were prepared by metalorganic vapor deposition (MOCVD) under various growth conditions. It was found that the surface morphology and V-shaped pits were determined by growth temperature. Two diffe
Autor:
Wei-I Lee, Li-Wei Tu, Hsin Hsiung Huang, Kuei Ming Chen, Pei Lun Wu, Hung Wei Yu, C. H. Chiang, Ting Li Chu
Publikováno v:
Japanese Journal of Applied Physics. 47:8394-8396
To prevent the cracking of GaN thick films grown on a sapphire substrate by hydride vapor phase epitaxy (HVPE), a novel technique without complex processes is developed. By adding a temperature ramping step in the HVPE GaN epitaxy process, more than