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Autor:
Li Jing, Qiao Bao-Wei, Chen Liang-Yao, Tang Ting-Ao, Cai Yan-Fei, Chen Bomy, Lai Yun-Feng, Lin Yinyin, Zhou Peng, Feng Jie, Cai Bing-chu
Publikováno v:
Chinese Physics Letters. 24:781-783
Electrical properties and phase structures of (Si+N)-codoped Ge2Sb2Te5 (GST) for phase change memory are investigated to improve the memory performance. Compared to the films with N or Si dopants only in previous reports, the (Si+N)-doped GST has a r