Zobrazeno 1 - 3
of 3
pro vyhledávání: '"550"'
Autor:
Kristin De Meyer, Nadine Collaert, Daeyong Kim, Marc Schaekers, Naoto Horiguchi, Soon Aik Chew, Kathy Barla, Jean-Luc Everaert, Geoffrey Pourtois, Erik Rosseel, Steven Demuynck, Anda Mocuta, Keo Myoung Shin, Hao Yu, Anthony P Peter, Aaron Thean, Joon-Gon Lee, Woo-Bin Song
Publikováno v:
IEEE Transactions on Electron Devices. 63:4632-4641
In recent CMOS technology, extreme shrinking of contact area at source/drain regions raises serious concerns of high metal/semiconductor contact resistance. Confronting this problem, we introduce a precontact amorphization implantation plus Ti silici
Autor:
Mehul C. Raval, Sandeep S. Saseendran, Stephan Suckow, Anil Kottantharayil, Chetan Singh Solanki, Sekaran Saravanan, Amruta P. Joshi
Publikováno v:
IEEE Journal of Photovoltaics. 5:1554-1562
In this study, the impact of impurities incorporated into plated nickel seed layer on silicide formation and the influence of annealing temperature on the fill-factor (FF) loss of solar cells with Ni-Cu contacts is investigated. The silicide growth o
Publikováno v:
IEEE Journal of Photovoltaics. 5:819-825
We have demonstrated a novel process for the fabrication of inverted pyramidal structures on silicon. The proposed technique uses no photolithography step and is instead replaced by a thin-film deposition step and thermal annealing. In this paper, in