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Autor:
Kristin De Meyer, Nadine Collaert, Daeyong Kim, Marc Schaekers, Naoto Horiguchi, Soon Aik Chew, Kathy Barla, Jean-Luc Everaert, Geoffrey Pourtois, Erik Rosseel, Steven Demuynck, Anda Mocuta, Keo Myoung Shin, Hao Yu, Anthony P Peter, Aaron Thean, Joon-Gon Lee, Woo-Bin Song
Publikováno v:
IEEE Transactions on Electron Devices. 63:4632-4641
In recent CMOS technology, extreme shrinking of contact area at source/drain regions raises serious concerns of high metal/semiconductor contact resistance. Confronting this problem, we introduce a precontact amorphization implantation plus Ti silici