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Autor:
Claudio Fiegna, Nicole Wils, Hans Tuinhout, Felice Crupi, Gino Giusi, Paolo Magnone, Pietro Andricciola, R. Jain
Publikováno v:
IEEE Transactions on Electron Devices. 58:2347-2353
This paper examines the impact of hot carriers (HCs) on n-channel metal-oxide-semiconductor (MOS) field-effect transistor mismatch across the 45- and 65-nm complementary MOS technology generations. The reported statistical analysis is based on a larg