Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
IEEE Transactions on Magnetics. 44(9):2100-2106
A magnetic material with high permeability and low loss characteristics at high frequency is required for miniaturizing electronic components such as antennas. The key factors to keeping low magnetic loss are a high magnetic resonance frequency and t
Autor:
Masashi Yamamoto, Shigetoshi Sugawa, K. Nii, Hiroshi Akahori, Philippe Gaubert, Tatsufumi Hamada, M. Hirayama, Katsuyoshi Endo, Tadahiro Ohmi, Kenta Arima, Akinobu Teramoto
Publikováno v:
IEEE Transactions on Electron Devices. 54(6):1438-1445
In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH- ions in the cleaning solution compared with a Si(100) surface. A flat Si(11
Autor:
Tadahiro Ohmi, Masashi Yamamoto, Tatsufumi Hamada, Philippe Gaubert, Koji Kotani, Akinobu Teramoto
Publikováno v:
IEEE Transactions on Electron Devices. 53(4):851-856
This paper reports that the low-frequency noise in p-channel MOSFETs fabricated on [110] and (100) crystallographic oriented silicon is related to the microroughness of the silicon surface. Since the conventional RCA cleaning process makes the surfac
Publikováno v:
IEEE Transactions on Electron Devices. 47(7):1370-1374
This paper focuses attention on electrical properties of ultra-thin silicon nitride films grown by radial line slot antenna high-density plasma system at a temperature of 400/spl deg/C as an advanced gate dielectric film. The results show low density
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 7(4):440-446
Due to the an increase in pattern densities and wafer diameters, it is extremely difficult for wet chemical processing to perform complete cleaning, rinsing and drying for highly rugged surface of very fine pattern ULSI devices. IPA Vapor Drying is a
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 7(3):389-393
The resolution enhancement of contact-hole resist patterns featuring precise linear correlation between mask size and resist-pattern size by employing a surface-active developer is presented. The addition of surfactant improves the wettability of the
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 5(4):337-346
An ultraclean (UC) magnetically enhanced reactive ion etcher (MERIE) is proposed to overcome the limitations of the present-state MERIE available commercially. The sensitivity of gas compositions, pumping speed, substrate temperature and magnetic fie
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 5(2):107-113
The optimum conditions for the fluorine passivation of 316L stainless steel are described. The direct fluoridation products formed at temperatures of 320 degrees C or lower are composed solely of FeF/sub 2/, while those which were formed at the tempe
Publikováno v:
IEEE Transactions on Electron Devices. 39(3):537-545
The effects of silicon surface microroughness on electrical properties of thin-oxide films, such as breakdown electric field intensity (E/sub BD/) and time-dependent dielectric breakdown (Q/sub BD/), have been studied, where the microroughnesses of s
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 5(2):121-127
In the manufacture of submicron or deep submicron ULSIs, it is important to completely suppress native oxide growth on the silicon wafer surfaces. In a wet process, dissolved oxygen must be removed from the ultrapure water used for the final rinsing