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pro vyhledávání: '"Finlay D"'
Autor:
Finlay D. Morrison, James F. Scott
Publikováno v:
Ferroelectrics. 371:3-9
Several fundamental physics problems concerning ferroelectric thin films are discussed with direct application to industry problems. The first is a model of dielectric breakdown under d.c. voltage stressing, extended from single capacitor films to mu
Autor:
Margarita Correa, Toshiaki Tatsuta, Finlay D. Morrison, M. M. Saad, Hong Jin Fan, S. Kawasaki, Osamu Tsuji, James F. Scott, Gustau Catalan, J. M. Gregg
Publikováno v:
Integrated Ferroelectrics. 95:180-186
A modification of liquid source misted chemical deposition process (LSMCD) with heating mist and substrate has developed, and this enabled to control mist penetrability and fluidity on sidewalls of three-dimensional structures and ensure step coverag
Autor:
T. B. Adams, Finlay D. Morrison, Robert M. Bowman, Gustau Catalan, M. M. Saad, J. M. Gregg, A. Schilling, P. Baxter, James F. Scott
Publikováno v:
Integrated Ferroelectrics. 92:53-64
This paper summarises some of the most recent work that has been done on nanoscale ferroelectrics as a result of a joint collaborative research effort involving groups in Queen's University Belfast, the University of Cambridge and the University of S
Autor:
Falak Sher, José L. Prieto, James F. Scott, Finlay D. Morrison, Neil D. Mathur, W. Eerenstein, J. P. Attfield
Publikováno v:
Philosophical Magazine Letters. 87:249-257
We describe experimental difficulties, and associated artefacts, that arose during the study of thin epitaxial films of the proposed multiferroic materials BiFeO3 and BiMnO3. The problems experienced include large leakage currents and charge injectio
Publikováno v:
Ferroelectrics. 336:237-245
A summary is presented of recent developments in ferroelectric nanotubes, nanowires and nanodots, their electrical characterization and related theories of their structures, including the possibility of toroidal ordering. Also summarized is recent wo
Autor:
Xiaojie Lou, Finlay D. Morrison, James F. Scott, Ming Zhang, M. Miyake, Osamu Tsuji, T. J. Leedham, Toshiaki Tatsuta
Publikováno v:
Integrated Ferroelectrics. 74:165-172
We have found that a hafnia precursor (hafnium bis-isopropoxy bis-thd) for chemical solution deposition (CSD) yields a crystallization temperature ca. 80°C above that usually found for CSD film deposition (e.g., 521°C for Hf-butoxide). These result
Publikováno v:
Ferroelectrics. 286:223-235
We discuss several new aspects of ferroelectric thin-film physics: (1) The apparent surface ordering in polymeric films of the PVDF family and the likelihood of domain-free switching; (2) coherent nucleation of nano-domains in front of a larger advan