Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Kaili Zhang"'
Publikováno v:
IEEE Access, Vol 8, Pp 50792-50800 (2020)
Recently, experimental results have demonstrated that perpendicular magnetic tunnel junction (p-MTJ) with the antiferromagnetic(AFM)/ferromagnetic (FM)/oxide structure can achieve field-free spin-orbit torque (SOT) switching since the AFM metal strip
Externí odkaz:
https://doaj.org/article/c9bbd9a4d9d64ea9bcd78c828acfe45f
Publikováno v:
IEEE Access, Vol 6, Pp 65796-65802 (2018)
Brain is the most complex organ of human, which serves as the center of controlling most activities. A novel methodology called complex network is capable of characterizing the functional connectivity of human brain by means of graph theoretical meas
Externí odkaz:
https://doaj.org/article/b9aae94f548b43a3a71dec3e398ebe95
Autor:
Kaili Zhang, Masashi Unoki
Publikováno v:
2022 Asia-Pacific Signal and Information Processing Association Annual Summit and Conference (APSIPA ASC).
Publikováno v:
2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT).
Publikováno v:
ICASSP 2022 - 2022 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP).
Publikováno v:
2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).
Publikováno v:
2021 19th International Conference on Optical Communications and Networks (ICOCN).
This paper proposes a service priority based cross-layer routing and resource allocation algorithm in QKD-ON. Results show it achieves good performance in terms of service success ratio and resource utilization.
Publikováno v:
2021 IEEE 10th Non-Volatile Memory Systems and Applications Symposium (NVMSA).
Autor:
Youguang Zhang, You Wang, Wang Xian, Deming Zhang, Bi Wang, Chuanjie Wang, Erya Deng, Weisheng Zhao, Lang Zeng, Peng Wu, Kaili Zhang
Publikováno v:
ISCAS
Benefitting from its non-volatility, high speed, low power and inherent radiation hardened characteristic, magnetic random access memory (MRAM) has been used in aerospace and avionic electronics. Owing to its high sensing reliability, precharge diffe
Publikováno v:
ISCAS
In this paper, we present a novel magnetic nonvolatile flip-flop (MNV-FF) for fast and low-power backup operation with a compact cell area. It employs perpendicular magnetic tunnel junctions (p-MTJs) as its non-volatile data backup storage units and