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pro vyhledávání: '"Jo SH"'
Publikováno v:
IEEE Photonics Journal, Vol 5, Iss 4, Pp 6800706-6800706 (2013)
Dark current and avalanche gain M on AlAs0.56Sb0.44 (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) avalanche photodiodes (APDs) were measured at temperatures ranging from 77 K to 300 K. To avoid possible ambiguity in break
Externí odkaz:
https://doaj.org/article/ba83834348db4e1c8d3990f686baab46