Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Tadahiro Ohmi"'
Demonstrating individual leakage path from random telegraph signal of stress induced leakage current
Autor:
Naoya Akagawa, T. Inatsuka, Toshiki Obara, Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Time-dependent characteristics of stress induced leakage current (SILC) for the 5.7 and 7.7 nm oxides were evaluated to detect the random telegraph signal (RTS) of gate leakage current. The leakage current from the RTS of IG was extracted. Each curre
Publikováno v:
2013 22nd International Conference on Noise and Fluctuations (ICNF).
The noise of inversion and accumulation mode MOSFETs has been compared and analysed in terms of doping concentration. For low doping concentration, both devices have similar noise levels. The increase of the doping concentration results in a degradat
Publikováno v:
ICICDT
Threshold voltage variability, random telegraph signal, and leakage current of gate oxides and pn junctions of numerous MOSFETs are evaluated by the array test circuits. By converting from current signal of MOSFETs to the voltage signal in the test c
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
Stress induced leakage current (SILC) in the order of 10-17 to 10-13 A were statistically evaluated by using an advanced test circuit. In this paper, the distribution of SILC was evaluated by changing measurement electric fields, electric stress inte
Publikováno v:
ESSDERC
The scattering mechanisms limiting the electron mobility in Si(110) MOSFETs have been studied in function of the temperature. They have been compared to the ones limiting the electron mobility in Si(100) MOSFETs. It appeared that the lower electron m
Autor:
S. Kuroki, Xun Gu, Tadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda, Takenao Nemoto, Yugo Tomita, Shigetoshi Sugawa
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
A novel chemically, thermally and electrically robust Cu damascene interconnects with an organic non-porous ultralow-k (ULK) dielectric fluorocarbon (k=2.2), deposited by an advanced microwave excited plasma enhanced CVD, is demonstrated. A practical
Autor:
Y. Kumagai, T. Inatsuka, Rihito Kuroda, Tadahiro Ohmi, Shigetoshi Sugawa, Tomoyuki Suwa, Akinobu Teramoto
Publikováno v:
2012 IEEE International Conference on Microelectronic Test Structures.
We propose a test circuit which can evaluate statistical characteristics of gate leakage current in a very short time with high accuracy (10−17 – 10−17 A, 87344 samples in 80 s). The absolute value of the gate leakage current is verified and th
Autor:
Yugo Tomita, Y. Kobayashi, Tadahiro Ohmi, S. Sugawa, Akihide Shirotori, S. Kuroki, R. Duyos-Mateo, Xun Gu, Takaaki Matsuoka, A. Saito, Akinobu Teramoto, Toshihisa Nozawa, Kotaro Miyatani, Takenao Nemoto
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
An organic non-porous low-k dielectric, fluorocarbon (k=2.2), deposited by a new microwave excited plasma enhanced CVD was successfully integrated into Cu damascene interconnects. A practical nitrogen plasma treatment was also developed as a post dry
Autor:
Hiroaki Tanaka, Akinobu Teramoto, Tadahiro Ohmi, Yukihisa Nakao, Naoto Miyamoto, Rihito Kuroda, Shigetoshi Sugawa
Publikováno v:
2010 International Electron Devices Meeting.
A formation technology of ultra-low series resistance CMOS source/drain (S/D) electrodes is developed. The silicide/silicon contact resistivity (R c ) of 8.0×10−10 Ω·cm2 and the electrode's sheet resistance (R sheet ) of less than 5.0 Ω/□ a
Publikováno v:
2009 Proceedings of the European Solid State Device Research Conference.
The evaluation of new equipments developed at the Tohoku University and based on a very low electron temperature microwave-excited high-density plasma is presented through the study of the Flicker noise. These new equipments which are working with ve