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pro vyhledávání: '"Makoto Kato"'
Autor:
Hiroshi Kimura, Masaki Miyazato, Takahito Kojima, Yusuke Kobayashi, Shinsuke Harada, Makoto Kato, Naoyuki Ohse, Tadao Morimoto, Manabu Takei
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
Integration of SBD into SiC-MOSFET is promising to solve body-PiN-diode related problems known such as forward degradation and reverse recovery loss. Particularly in lower breakdown-voltage-class SBD-integrated MOSFET, cell pitch reduction has a grea