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pro vyhledávání: '"Myungsoo Kim"'
Autor:
Jack C. Lee, Vanessa Avramovic, Xiaohan Wu, Ruijing Ge, Henri Happy, Deji Akinwande, Myungsoo Kim, Emiliano Pallecchi, Etienne Okada
Publikováno v:
IEEE International Electron Devices Meeting, IEDM 2019, Session 9-Microwave, Millimeter Wave and Analog Technology-Compound Semiconductors and Novel Materials for RF and mmWave
IEEE International Electron Devices Meeting, IEDM 2019, Session 9-Microwave, Millimeter Wave and Analog Technology-Compound Semiconductors and Novel Materials for RF and mmWave, Dec 2019, San Francisco, United States. paper 9.5, 4 p., ⟨10.1109/IEDM19573.2019.8993470⟩
IEEE International Electron Devices Meeting, IEDM 2019, Session 9-Microwave, Millimeter Wave and Analog Technology-Compound Semiconductors and Novel Materials for RF and mmWave, Dec 2019, San Francisco, United States. paper 9.5, 4 p., ⟨10.1109/IEDM19573.2019.8993470⟩
International audience; Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to 110 GHz. Crystalline hBN enables the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bdfbe8948683a287296d396673469fb3
https://hal.archives-ouvertes.fr/hal-03335212
https://hal.archives-ouvertes.fr/hal-03335212