Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Martin Albrecht"'
Autor:
Leonardo Cancellara, Anna Mogilatenko, Sylvia Hagedorn, Dominik Jaeger, Sebastian Walde, Markus Weyers, Martin Albrecht
Publikováno v:
Journal of Crystal Growth. 512:142-146
In this work we investigated annealing of 350 nm and 450 nm thick sputtered (SP) AlN on sapphire in the temperature range from 1650 °C to 1730 °C. The most distinct decrease in the threading dislocation density (TDD), from initially 3 × 1010 cm−
Autor:
Mike Pietsch, Andreas Fiedler, Zbigniew Galazka, Matthias Bickermann, Robert Schewski, Steffen Ganschow, Martin Albrecht, Detlef Klimm, Klaus Irmscher, Rainer Bertram
Publikováno v:
Journal of Crystal Growth. 486:82-90
We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-
Autor:
Andrii Nikolenko, O. Belyaev, Vladimir Z. Turkevich, V. B. Kapustianyk, В. Tsykaniuk, Igor Dzięcielewski, Izabella Grzegory, J.L. Weyher, S. Porowski, Martin Albrecht, Marcin Sarzyński, B. Sadovyi, I. A. Petrusha, V. V. Strelchuk
Publikováno v:
Journal of Crystal Growth. 449:35-42
Experimental studies of diffusion of oxygen in bulk wurtzite-type GaN crystals grown by Halide Vapor Phase Epitaxy (HVPE) are reported. Oxygen concentration profiles were studied in as-grown GaN crystals and also after annealing of crystals at temper
Autor:
Thomas Schroeder, Klaus Irmscher, Detlef Klimm, Albert Kwasniewski, Raimund Grueneberg, Matthias Bickermann, Martin Albrecht, Andreas Popp, Steffen Ganschow, Saud Bin Anooz, Andrea Dittmar, Robert Schewski, Isabelle Hanke, Mike Pietsch, Uta Juda, Zbigniew Galazka, Tobias Schulz
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 67:100511
In the course of development of transparent semiconducting oxides (TSOs) we compare the growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) TSOs, namely β-Ga2O3 and Ga-based spinels MgGa2O4, ZnGa2O4, and Zn1-xMgxGa
Autor:
Mariia Anikeeva, Ewa Grzanka, Martin Albrecht, Marta Sawicka, Tobias Schulz, Torsten Ernst, Grzegorz Staszczak, Czeslaw Skierbiszewski, Joanna Moneta, Tadeusz Suski, Marcin Siekacz, P. Wolny, A. Feduniewicz-Żmuda
Publikováno v:
Superlattices and Microstructures. 133:106209
In this work we investigate InGaN/GaN short period superlattices (SPSLs) grown on (0001) GaN and on relaxed In0.2Ga0.8N buffers with varying degree of plastic relaxation. The SPSLs were fabricated by plasma assisted molecular beam epitaxy (PAMBE). De