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Publikováno v:
Journal of Science: Advanced Materials and Devices, 1(2), 220-223. Elsevier
Journal of Science: Advanced Materials and Devices, Vol 1, Iss 2, Pp 220-223 (2016)
Journal of Science: Advanced Materials and Devices, Vol 1, Iss 2, Pp 220-223 (2016)
We prepare and optically characterize a thin film of GaN:Eu. Room temperature intense emission band at around 620 nm is observed, corresponding to 5D0 → 7F2 electronic dipole transition of Eu3+ ions in the GaN host material. At lower temperatures,
Autor:
Y.H. Chen, M.P. Johansson-Jõesaar, Magnus Odén, N. Schell, Jens Birch, Naureen Ghafoor, Daniel Ostach, Lina Rogström
Publikováno v:
Chen, Y,H.; Rogstroem, L.; Ostach, D.; Ghafoor, N.; Johasson-Joesaar, M.P.; Schell, N.; Birch, J.; Oden, M.: Effects of decomposition route and microstructure on h-AlN formation rate in TiCrAlN alloys. In: Journal of Alloys and Compounds. Vol. 691 (2017) 1024-1032. (DOI: 10.1016/j.jallcom.2016.08.299)
The phase evolution of cubic (c), solid solution TixCr-0.37Al1-0.37-x N alloys with x = 0.03 and 0.16, and the kinetics of the hexagonal (h)-AlN formation are studied via in situ wide angle x-ray scattering experiments during high temperature (1000-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d714bf0ac8c75bb4bcc0b0aba32afe9
https://publications.hereon.de/id/34453
https://publications.hereon.de/id/34453