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Autor:
Armstrong, R.
A method of non-linear device identification derived from the measured spectral response to a sinusoidal drive is developed. From these considerations the concept of dynamic characteristics is proposed as a generalisation of the static characteristic
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.345890
Autor:
Pritchard, Timothy Neil
The purpose of this thesis is to describe research, using both solid and solution-state NMR techniques, to investigate the properties of a wide variety of silicon-containing materials. One solid-state (^29)Si NMR technique ((^29)Si-(^1)H cross-polari
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328996
Autor:
Curry, R. G.
Neutron scattering and susceptibility measurements as a function of temperature are reported on alloys between the light rare earths Pr and Nd and the heavy rare earths Tb, Dy and Ho over the entire composition range. It is clear from the results tha
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.452794
Autor:
Barnett, S. J.
Double crystal x-ray topography using a synchrotron radiation source has been used to measure the lattice distortions present in 50mm diameter samples of (001) semi-insulating LEG gallium arsenide. Lattice strains and tilts have been mapped in In-dop
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379702
Autor:
Catlow, Brendan
Fourier transform infrared techniques have been applied in order to determine the optical constants of several liquid and thin-film solid systems over infrared frequencies. In the far infrared region, dispersive interferometry has been employed leadi
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375046
Autor:
Smith, Colin
This thesis is concerned with calculations of the Auger recombination rate in direct gap semiconductors. It is composed of two parts: in the first and major part, the calculation of the CHCC Auger recombination process in a model of a quantum well he
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.353871
Autor:
Miles, Simon Jonathon
X-rays can be used as a sensitive, non-destructive probe for the characterisation of semiconductors. The energy and wavelength of X-rays is such that structural information down to the Ảngstrom level can be yielded with a depth penetration of sever
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.330221
Autor:
Brown, Paul D.
This study has principally been concerned with the structural assessment of a range of II-VI epitaxial layers using the combined techniques of cross-sectional transmission electron microscopy and microdiffraction. Iodine reactive ion sputtering has b
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.327847
Autor:
Lloyd, J. P.
Metal-insulator-semiconductor (MIS) structures based on glow discharge produced hydrogenated amorphous silicon (a-Si:H), and incorporating Langmuir-Blodgett (LB) film insulating layers, have been investigated. Two distinct types of MIS diode have bee
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.332128
Autor:
Taylor, R. I.
In this thesis, calculations of Auger recombination rates in semiconductor quantum wells are presented. Chapter One introduces Auger recombination, and the reasons for studying the Auger process are explained. Basically, Auger recombination is a non-
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379107