Zobrazeno 1 - 7
of 7
pro vyhledávání: '"J. Lam"'
Autor:
Zhihong Mai, J. Lam, H.P. Ng, Siong Luong Ting, C.Q. Chen, Angela Teo, G.B. Ang, P.T. Ng, Francis Rivai
Publikováno v:
International Symposium for Testing and Failure Analysis.
As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected
Autor:
G.B. Ang, H.P. Ng, P.C. Ang, J. Lam, Francis Rivai, C. Q. Chen, Alfred Quah, Zhihong Mai, P.T. Ng
Publikováno v:
International Symposium for Testing and Failure Analysis.
As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper explains how the authors used nanoprobing techniques and electrical characterization to trace a die failure to a problem with the photoresist used to mask the wafer for ion implantation. Nanoprobing and leakage current measurements reveale
Autor:
M.K. Dawood, J. Lam, T.H. Ng, H. H. Yap, G.R. Low, Z.H. Mai, D.D. Wang, Y.M. Huang, H. Feng, H. Tan, Y.Z. Zhao, P.K. Tan, R. He
Publikováno v:
Scopus-Elsevier
With the scaling of semiconductor devices to nanometer range, ensuring surface uniformity over a large area while performing top down physical delayering has become a greater challenge. In this paper, the application of laser deprocessing technique (
Publikováno v:
International Symposium for Testing and Failure Analysis.
Conductive-Atomic Force Microscopy (C-AFM) is a popular failure analysis method used for localization of failures in Static Random Access Memory (SRAM) devices [1-4]. The SRAM structure has a highly repetitive pattern where any abnormality in a faile
Autor:
H. Tan, Z.H. Mai, H.B. Lin, H.L. Li, R. He, Q. Deng, L. Zhu, J. Sudijono, J. Lam, S.L. Toh, E. Hendarto, P.K. Tan, Y.W. Goh
Publikováno v:
International Symposium for Testing and Failure Analysis.
The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages,
Publikováno v:
International Symposium for Testing and Failure Analysis.
As electronic devices shrink further in the nanometer regime, electrical characterization using nanoprobing has become increasingly important. Focused ion beam (FIB) is one useful technique that can be used to create markings for ease of defective si