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Autor:
Liang, Xiao, Durmusoglu, Emek G., Lunina, Maria, Hernandez-Martinez, Pedro Ludwig, Valuckas, Vytautas, Yan, Fei, Lekina, Yulia, Sharma, Vijay Kumar, Yin, Tingting, Ha, Son Tung, Shen, Ze Xiang, Sun, Handong, Kuznetsov, Arseniy, Demir, Hilmi Volkan
The strength of electrostatic interactions (EI) between electrons and holes within semiconductor nanocrystals profoundly impact the performance of their optoelectronic systems, and different optoelectronic devices demand distinct EI strength of the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a967aeb439803deb2d25139c55ad93c