Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Lortz, Rolf"'
Autor:
Xu, Shuigang, Shen, Junying, Long, Gen, Wu, Zefei, Bao, Zhi-qiang, Liu, Cheng-Cheng, Xiao, Xiao, Han, Tianyi, Lin, Jiangxiazi, Wu, Yingying, Lu, Huanhuan, Hou, Jianqiang, An, Liheng, Wang, Yuanwei, Cai, Yuan, Ho, K. M., He, Yuheng, Lortz, Rolf, Zhang, Fan, Wang, Ning
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19e5a584c506a10fb0187c8a751481dc
Autor:
Long, Gen, Maryenko, Denis, Shen, Junying, Xu, Shuigang, Hou, Jianqiang, Wu, Zefei, Wong, Wing Ki, Han, Tianyi, Lin, Jiangxiazi, Cai, Yuan, Lortz, Rolf, Wang, Ning
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the phonon scatte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbf7d719e8d232b192ac358a4b06be5f
Autor:
Wu, Zefei, Han, Yu, Zhu, Wei, He, Mingquan, Xu, Shuigang, Chen, Xiaolong, Ye, Weiguang, Han, Tianyi, Lu, Huanhuan, Huang, Rui, Wang, Lin, He, Yuheng, Cai, Yuan, Lortz, Rolf, Wang, Ning
We demonstrate that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. Bernal-stacked few-layer graphene has been investigated by analyzing its Landau level spectra through quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c76e1a6523cf74cc96867560e0405a8