Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Bruce A. Smith"'
Autor:
Rajiv N. Sejpal, Bruce W. Smith
Publikováno v:
Journal of Vacuum Science & Technology B. 39:062604
Pattern transfer in an extreme ultraviolet lithography (EUVL) system requires reflective optical elements illuminated at oblique illumination angles. This, in combination with the three-dimensional effects at the mask, is the source of the so-called
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2116-2120
The degradation of projected images using TM polarization is not intrinsic because losses in image contrast can be recoverable. By controlling the photoresist/substrate interface reflectivity, high modulation for TM polarization can be maintained for
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2192-2196
In recent years, the anomalous transmission of subwavelength apertures has become an emergent subject within the physical sciences. While the gain mechanism of these structures is still uncertain, the effect has been observed in several studies. Simi
Autor:
Vicky Philipsen, Eric Hendrickx, Patrick A. Kearney, Rik Jonckheere, Zachary Levinson, Obert Wood, Sudharshanan Raghunathan, Erik Verduijn, Markus P. Benk, Kenneth A. Goldberg, Pawitter Mangat, Bruce W. Smith
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:06F801
Nontelecentric illumination in extreme ultraviolet (EUV) lithography leads to pattern shifts through focus called telecentricity errors. As the industry moves toward finer pitch structures and higher numerical apertures (NA) to improve resolution, th
Autor:
Chris Maloney, Burak Baylav, Zac Levinson, Bruce W. Smith, Alessandro Vaglio Pret, Joost Bekaert
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:06F801
Line edge roughness (LER) is a common problem to all lithography techniques and is seen as an increasingly important challenge for advanced technology nodes. Contributions to LER can come from the aerial image itself or the resist related processes.
Autor:
Alan J. Telecky, Peng Xie, Douglas A. Keszler, Andrew Grenville, Jason K. Stowers, Bruce W. Smith
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:C6S19-C6S22
The authors present a directly photopatternable inorganic hardmask for 193 nm lithography based on the solution-deposited dielectric metal oxide sulfate (MSOx) system. To demonstrate pattern fidelity, 18 nm half-pitch features were written at a dose
Autor:
Bruce W. Smith, P. Xie
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:C6Q12-C6Q19
An approach is presented to allow for imaging down to 26 nm using 193 nm projection reduction lithography together with evanescent wave optical effects at the imaging plane. The physical limitations of imaging imposed by the refractive indices of the
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:814
CrxNy and CrxOyNz thin films and multilayer CrxNy–CrxOyNz thin films have been investigated as a binary masking material for 157 nm lithography. The chemical compositions of commercial photolithography masks were determined to be a bilayer structur
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:42
We report on a process for the fabrication of Mo2C and HfC refractory metal carbide field emitter arrays using a modified Spindt tip fabrication process. Measurements of the aspect ratios of emitter cones showed that Mo2C tip structures have an aspec
Publikováno v:
Scopus-Elsevier
Emitter life and emission stability of field emission vacuum microelectronic devices are strongly influenced by the morphology and surface chemistry of the emission surfaces. Vacuum microelectronic devices like field emission displays (FEDs) are vacu