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Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:1714
For practical titanium silicide device application the oxygen behavior in the solid phase interaction is important to study. The Ti/Si and Ti/SiO2 interaction by the NH3 plasma assisted thermal annealing and oxidation of Ti/SiO2 and TiSi2/Si in a wet