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pro vyhledávání: '"550"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:688-691
The formation and morphological evolution of the germanides formed in the Ni1−xTax/Ge (x=0 and 0.1) systems were examined using ex situ and in situ annealing experiments. It was observed that the Ni-germanide in the Ni0.9Ta0.1/Ge system remained st
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:1139-1144
A compact non-evaporable getter (NEG) pump is made by stacking sintered titanium–vanadium blades recently available from SAES Getters as St185. The 50 blades are stacked between copper spacers on a stainless steel tube, and are activated by a remov
Autor:
M. K. Lei, Z. L. Zhang
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:524-529
Plasma source ion carburizing is a low-temperature, low-pressure carburizing approach for improved wear resistance of steel with specific advantages over plasma carburizing and plasma source carbon ion implantation. A carburizing apparatus based on a
Autor:
M. K. Lei, Z. L. Zhang
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:2986-2990
Plasma source ion nitriding is a new approach for surface modification of steel with certain advantages over conventional plasma nitriding and plasma‐based nitrogen ion implantation. A nitriding apparatus based on an electron cyclotron resonance (E
Autor:
R. A. Langley
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1185-1187
A technique has been developed for making aluminum wire seal gaskets of various sizes and shapes for use with both stainless steel and aluminum alloy flanges. The gasket material used is 0.9999 pure aluminum, drawn to a diameter of 3 mm. This materia
Autor:
Paul P. Merchant, Jun Amano
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:459-462
Thin metal films of Cr, Ti, Mo, and W–Ti (10 wt.%) have been investigated for their effectiveness in preventing the Al–PtSi reaction which occurs during the post‐metallization alloy treatment of Ohmic contacts and Schottky diodes on integrated