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Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:794-798
In this paper, the results of an investigation of the Mo–polycide/Al–1% Si interface characteristics are reported. Mo–polycide was produced by sputtering a 0.3 μm MoSi2.2 film on 0.3 μm of phosphorus doped poly‐Si. The composite layer was r
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:688-691
The formation and morphological evolution of the germanides formed in the Ni1−xTax/Ge (x=0 and 0.1) systems were examined using ex situ and in situ annealing experiments. It was observed that the Ni-germanide in the Ni0.9Ta0.1/Ge system remained st
Autor:
J. L. Regolini, S. Bodnar
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:2336-2340
Epitaxial layers of the ternary alloy SiGeC were grown on 〈100〉 Si substrates. Using a rapid thermal chemical vapor deposition reactor working at low temperature and reduced pressure (550 °C and 1 Torr), we obtained SiGeC layers with a carbon co
Autor:
Michel Bayard, Sudhakar Kulkarni
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:1193-1196
High density ITO (indium–tin oxide) targets doped with Al2O3 and SiO2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen–argon ga
Autor:
Wolf‐Dieter Münz
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:2717-2725
TiAl films have been produced in various compositions by using the sputter ion plating process. Films sputtered reactively from a target with the composition of TiAl 50:50 at. % have been deposited with a composition of 27.5 at. % Ti, 28.9 at. % Al,
Autor:
Paul P. Merchant, Jun Amano
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:459-462
Thin metal films of Cr, Ti, Mo, and W–Ti (10 wt.%) have been investigated for their effectiveness in preventing the Al–PtSi reaction which occurs during the post‐metallization alloy treatment of Ohmic contacts and Schottky diodes on integrated