Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Martin Albrecht"'
Autor:
Martin Albrecht, Czeslaw Skierbiszewski, Christian Hauswald, Jonas Lähnemann, M. Korytov, Sergio Fernández-Garrido, Caroline Chèze, Oliver Brandt
Publikováno v:
Physical Review Applied. 6
Growing $I\phantom{\rule{0}{0ex}}I\phantom{\rule{0}{0ex}}I-V$ semiconductor alloys like GaN along different crystal directions, to yield either ``Ga-polar'' or ``N-polar'' structures, can have a profound effect on optoelectronic device properties---i
Autor:
Caterina Cocchi, Claudia Draxl, Hannes Zschiesche, Martin Albrecht, Zbigniew Galazka, Anna Mogilatenko, Dmitrii Nabok, Holm Kirmse, Christoph Koch
Publikováno v:
Physical Review B. 94
We present a joint theoretical and experimental study on core-level excitations from the oxygen $K$ edge of $\ensuremath{\beta}{\text{-Ga}}_{2}{\text{O}}_{3}$. A detailed analysis of the electronic structure reveals the importance of O-Ga hybridizati