Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yi, Xiaoyan"'
β‑Ga2 O3 Air-Channel Field-Emission Nanodiode with Ultrahigh Current Density and Low Turn-On Voltage.
Autor:
Tang, Minglei, Ma, Chicheng, Liu, Lining, Tan, Xiaolong, Li, Yan, Lee, Young Jin, Wang, Guodong, Jeon, Dae-Woo, Park, Ji-Hyeon, Zhang, Yiyun, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin
Publikováno v:
Nano Letters; 2/7/2024, Vol. 24 Issue 5, p1769-1775, 7p
Publikováno v:
Journal of Chemical & Engineering Data; 12/9/2021, Vol. 66 Issue 12, p4326-4334, 9p
Autor:
Qi, Yue, Wang, Yunyu, Pang, Zhenqian, Dou, Zhipeng, Wei, Tongbo, Gao, Peng, Zhang, Shishu, Xu, Xiaozhi, Chang, Zhenghua, Deng, Bing, Chen, Shulin, Chen, Zhaolong, Ci, Haina, Wang, Ruoyu, Zhao, Fuzhen, Yan, Jianchang, Yi, Xiaoyan, Liu, Kaihui, Peng, Hailin, Liu, Zhiqiang
Publikováno v:
Journal of the American Chemical Society; 9/26/2018, Vol. 140 Issue 38, p11935-11941, 7p
Autor:
Shi B; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Liu Z; Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China., Li Y; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Chen Q; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Liu J; Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China., Yang K; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Liang M; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Yi X; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Wang J; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Li J; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Kang J; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Gao P; Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China., Liu Z; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Publikováno v:
Nano letters [Nano Lett] 2024 Jun 11. Date of Electronic Publication: 2024 Jun 11.
Autor:
Tang M; Research and Development Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, Henan Province China., Ma C; Research and Development Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Liu L; The State Key Laboratory on Integrated Optoelectronics, Institution of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Tan X; Research and Development Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, Henan Province China., Li Y; Research and Development Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China., Lee YJ; Korea Institute of Ceramic Engineering and Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsongnam-do 52851, Korea., Wang G; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, Henan Province China., Jeon DW; Korea Institute of Ceramic Engineering and Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsongnam-do 52851, Korea., Park JH; Korea Institute of Ceramic Engineering and Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsongnam-do 52851, Korea., Zhang Y; Research and Development Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Yi X; Research and Development Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Wang J; Research and Development Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Li J; Research and Development Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Publikováno v:
Nano letters [Nano Lett] 2024 Feb 07; Vol. 24 (5), pp. 1769-1775. Date of Electronic Publication: 2024 Jan 22.
Autor:
Wang L; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.; Mind Star (Beijing) Technology Co., Ltd. , Zhongguancun South Street, Haidian District, No. 45 Hing Fat Building 1001, Beijing 100872, China., Cheng Y; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.; Department of Electrical and Computer Engineering, John Hopkins University , Baltimore, Maryland 21218, United States., Liu Z; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China., Yi X; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China., Zhu H; School of Materials Science and Engineering, State Key Lab of New Ceramic & Fine Processing, Tsinghua University , Beijing 100084, China., Wang G; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
Publikováno v:
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2016 Jan 20; Vol. 8 (2), pp. 1176-83. Date of Electronic Publication: 2016 Jan 07.
Autor:
Wang L; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. wanglc@semi.ac.cn, Liu Z, Guo E, Yang H, Yi X, Wang G
Publikováno v:
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2013 Jun 26; Vol. 5 (12), pp. 5797-803. Date of Electronic Publication: 2013 Jun 06.