Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Gang Cao"'
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055312-055312-7 (2020)
Resistive random-access memory plays a key role in non-volatile and neuromorphic artificial electronic devices. In this work, we fabricated Ta/TaOx/AlN/Pt resistive memory devices with the inserted AlN layer to improve the performance. The devices ha
Externí odkaz:
https://doaj.org/article/cb34796f6564498c872fbb681c7ae9b9
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035147-035147-3 (2019)
We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ind
Externí odkaz:
https://doaj.org/article/eef2c9720883470a8befbe2712a71456
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035147-035147-3 (2019)
We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ind
Publikováno v:
AIP Conference Proceedings.
A correct determination of the isospin and spin-isospin properties of the nuclear effective interaction should lead to an accurate description of the Gamow-Teller resonance (GT), the Spin Dipole Resonance (SDR), the Giant Dipole Resonance (GDR) or th