Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Dandan Zhu"'
Autor:
Matteo Meneghini, Dandan Zhu, Colin J. Humphreys, Marina Berti, Andrea Gasparotto, Tiziana Cesca, Anna Vinattieri, Franco Bogani, Gaudenzio Meneghesso, Enrico Zanoni
Publikováno v:
AIP Advances, Vol 5, Iss 10, Pp 107121-107121-5 (2015)
This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of stora
Externí odkaz:
https://doaj.org/article/221819af86594b9eb6775ff57e3794b7
Autor:
Marco Calciati, Michele Goano, Francesco Bertazzi, Marco Vallone, Xiangyu Zhou, Giovanni Ghione, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Enrico Bellotti, Giovanni Verzellesi, Dandan Zhu, Colin Humphreys
Publikováno v:
AIP Advances, Vol 4, Iss 6, Pp 067118-067118-23 (2014)
Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural fe
Externí odkaz:
https://doaj.org/article/3f256fc1a6b74d5487ad5fdbe17a7a04
Autor:
F. Batignani, Enrico Zanoni, Anna Vinattieri, Colin J. Humphreys, Matteo Meneghini, Gaudenzio Meneghesso, Dandan Zhu, Franco Bogani
Publikováno v:
AIP Conference Proceedings.
By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation d
Autor:
Tiziana Cesca, Anna Vinattieri, Colin J. Humphreys, Matteo Meneghini, Enrico Zanoni, Franco Bogani, Gaudenzio Meneghesso, Dandan Zhu, Andrea Gasparotto, Marina Berti
Publikováno v:
AIP Advances, Vol 5, Iss 10, Pp 107121-107121-5 (2015)
This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of stora