Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Congwei Liao"'
Autor:
Ting Qin, Zewen Qu, Lianwen Deng, Shengxiang Huang, Congwei Liao, Heng Luo, Chen Li, Yuhui Peng, Min Tang, Xiaohui Gao
Publikováno v:
AIP Advances, Vol 11, Iss 7, Pp 075108-075108-6 (2021)
For large-area electronic applications, the mechanism of the leakage current in oxide-semiconductor thin-film transistors (TFTs) has become a critical issue. In this work, the impact of the irradiation location on the photo-leakage current of zinc ox
Externí odkaz:
https://doaj.org/article/a5bb97aac454473c93c7bb2a63a09a21
Publikováno v:
AIP Advances, Vol 9, Iss 6, Pp 065211-065211-7 (2019)
Though impressive advances of the extension of effective working distance for magnetic resonant coupling wireless power transfer system have been made over past decades, their applications have been severely limited by the requirement of unidirection
Externí odkaz:
https://doaj.org/article/dd782b593e4345b1a37c019c03401e0d
Autor:
Lianwen Deng, Heng Luo, Zewen Qu, Chen Li, Yuhui Peng, Xiaohui Gao, Min Tang, Congwei Liao, Shengxiang Huang, Ting Qin
Publikováno v:
AIP Advances, Vol 11, Iss 7, Pp 075108-075108-6 (2021)
For large-area electronic applications, the mechanism of the leakage current in oxide-semiconductor thin-film transistors (TFTs) has become a critical issue. In this work, the impact of the irradiation location on the photo-leakage current of zinc ox
Publikováno v:
AIP Advances, Vol 9, Iss 6, Pp 065211-065211-7 (2019)
Though impressive advances of the extension of effective working distance for magnetic resonant coupling wireless power transfer system have been made over past decades, their applications have been severely limited by the requirement of unidirection