Zobrazeno 1 - 5
of 5
pro vyhledávání: '"A. Q. Guo"'
Autor:
Q. X. Guo, Z. C. Zheng, L. H. Wang, K. Wang, X. M. Wang, S. Cheng, W. He, G. H. Yu, H.-W. Lee, Y. Q. Guo, J. Teng, T. Zhu
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111126-111126-8 (2023)
We demonstrate the spin–orbit torque (SOT) induced perpendicular magnetization switching in an annealed W/CoFeB/Zr/MgO multilayer with high thermal stability. It is found that the thermal stability factor can reach 79 after annealing at 540 °C. Wi
Externí odkaz:
https://doaj.org/article/30e613eb32224991b325b9ef4874dfc6
Autor:
J. W. Chen, Y. D. Li, M. Heini, B. K. Liu, Q. Q. Lei, Q. Guo, L. Wen, D. Zhou, W. Lu, C. F. He, A. Aierke
Publikováno v:
AIP Advances, Vol 10, Iss 11, Pp 115216-115216-5 (2020)
The effects of displacement damage due to 1 MeV electron radiation on 680 nm and 850 nm vertical-cavity surface-emitting lasers (VCSELs) were experimentally investigated. The displacement damage dose was calculated using the MULASSIS tool, where it w
Externí odkaz:
https://doaj.org/article/c99906b767f14e5d8a7aa8ac36cf3526
Degradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell
Autor:
X. B. Shen, A. Aierken, M. Heini, J. H. Mo, Q. Q. Lei, X. F. Zhao, M. Sailai, Y. Xu, M. Tan, Y. Y. Wu, S. L. Lu, Y. D. Li, Q. Guo
Publikováno v:
AIP Advances, Vol 9, Iss 7, Pp 075205-075205-6 (2019)
In this paper we reported the electrical and spectral properties of 1 MeV electron and 3 MeV proton irradiated In0.53Ga0.47As single junction solar cell, which is used as the fourth subcell of wafer bonded GaInP/GaAs//InGaAsP/InGaAs four-junction ful
Externí odkaz:
https://doaj.org/article/d26bd9fa5531408fb348be93128f8cce
Autor:
M. Heini, A. Aierken, Z. H. Li, X. F. Zhao, M. Sailai, X. B. Shen, Y. Xu, H. T. Liu, Y. D. Li, Q. Guo, C. M. Liu
Publikováno v:
AIP Advances, Vol 8, Iss 10, Pp 105022-105022-8 (2018)
The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analy
Externí odkaz:
https://doaj.org/article/1a1d46f4d86741269c9e341874d4d68e
Autor:
W. J. Zhang, H. Li, L. X. You, Y. H. He, L. Zhang, X.Y. Liu, X. Y. Yang, J. J. Wu, Q. Guo, S. J. Chen, Z. Wang, X. M. Xie
Publikováno v:
AIP Advances, Vol 5, Iss 6, Pp 067129-067129-6 (2015)
We develop single-photon detectors comprising single-mode fiber-coupled superconducting nanowires, with high system detection efficiencies at a wavelength of 940 nm. The detector comprises a 6.5-nm-thick, 110-nm-wide NbN nanowire meander fabricated o
Externí odkaz:
https://doaj.org/article/b23c9e7902684c438a7b4351fff05a86