Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yahya Moubarak Meziani"'
Autor:
Raphael Clerc, Jerzy Łusakowski, Gerard Ghibaudo, K. Romanjek, Thomas Skotnicki, Yahya Moubarak Meziani, Frederic Boeuf, M. Ferrier, Frederic Teppe, Nina Dyakonova, Wojciech Knap
Publikováno v:
Journal of Applied Physics. 96:5761-5765
We report on the high-field (up to 10T) magnetoresistance measurements performed on the short (down to 75-nm gate length) n-type Si metal-oxide-semiconductor field-effect transistors. The electron magnetoresistance mobility of these nanometer devices
Autor:
Yahya Moubarak Meziani, Michael Shur, Thomas Skotnicki, Wojciech Knap, Frederic Teppe, Frederic Boeuf, J. Lusakowski, Duncan K. Maude, N. Dyakonova, Sergey Rumyantsev
Publikováno v:
Applied Physics Letters. 85:675-677
We report on experiments on photoresponse to sub-THz (120GHz) radiation of Si field-effect transistors (FETs) with nanometer and submicron gate lengths at 300K. The observed photoresponse is in agreement with predictions of the Dyakonov–Shur plasma
Autor:
Taiichi Otsuji, Eiichi Sano, G. M. Tsymbalov, Hiroyuki Handa, Vyacheslav V. Popov, Yahya Moubarak Meziani, W. Knap, Dominique Coquillat, Frederic Teppe
Publikováno v:
Applied Physics Letters. 92:201108
Room temperature terahertz (far infrared) radiation emission from double grating coupled GaInAs∕AlGaAs∕GaAs heterojunctions is reported. Theoretical calculations of plasmon absorption spectrum are performed using a first principles electromagneti
Autor:
Wojciech Knap, Frederic Boeuf, Raúl Rengel, Yahya Moubarak Meziani, R. Tauk, Tomas Gonzalez, T. Skotnicki, Jerzy Łusakowski, M. J. Martı́n Martinez
Publikováno v:
Journal of Applied Physics. 101:114511
Room temperature electron mobility (μ) in nanometer Si metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate length (LG) down to 30 nm was determined by the magnetoresistance method. A decrease of μ with the decrease of LG was obse
Autor:
Mitsuhiro Hanabe, Taiichi Otsuji, Eiichi Sano, Takuma Ishibashi, Yahya Moubarak Meziani, Tomohiro Uno
Publikováno v:
Applied Physics Letters. 90:061105
A doubly interdigitated grating gates structure was incorporated into a GaAs-based high-electron mobility transistor to configure a plasmon-resonant emitter. Two dimensional electrons are then periodically confined in 100nm regions. The devices exhib
Autor:
Frederic Boeuf, Gerard Ghibaudo, Yahya Moubarak Meziani, J.-P. Cesso, Nina Dyakonova, A. El Fatimy, R. Tauk, Wojciech Knap, T. Skotnicki, Jerzy Łusakowski
Publikováno v:
Applied Physics Letters. 87:053507
Room-temperature magnetoresistance of nanometer bulk Si n-type metal-oxide semiconductor field-effect transistors was measured at magnetic fields up to 10 T. The electron magnetoresistance mobility was determined for transistors with the gate length