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pro vyhledávání: '"J. Benziger"'
Autor:
James C. Sturm, N. Yao, D. Carlson, K. H. Chung, Satheesh Kuppurao, J. Benziger, Kaushal K. Singh
Publikováno v:
Applied Physics Letters. 92:113506
A precursor, neopentasilane, is used to produce high-quality silicon epitaxy by chemical vapor deposition under 700°C with very high growth rates. Low background dopant concentration and excellent crystal quality were determined from secondary-ion-m