Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. Hussain"'
Autor:
Muhammad Mustafa Hussain, G. A. Torres Sevilla, Abdurrahman Gumus, Melvin E. Cruz, Amani S. Almuslem, Aftab M. Hussain
Publikováno v:
Applied Physics Letters. 108:094102
Thinned silicon based complementary metal oxide semiconductor (CMOS) electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etc
Publikováno v:
Applied Physics Letters. 103:224101
We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental
Publikováno v:
Applied Physics Letters. 102:134109
We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architectu
Publikováno v:
Applied Physics Letters. 97:023501
A metal/high-k gate stack with a p-type band edge effective work function (EWF) of about 5.0 eV is demonstrated using a thin WAlx capping layer. The WAlx stack exhibits a lower threshold voltage (higher flatband voltage) value and better equivalent o