Zobrazeno 1 - 5
of 5
pro vyhledávání: '"R E Jones"'
Publikováno v:
AIP Conference Proceedings.
The detection of corrosion under insulation is an ongoing challenge in the oil and gas industry. An early warning of areas of pipe at risk of corrosion can be obtained by screening along the length of the pipeline to inspect the insulation layer for
Autor:
R. E. Jones, F. Simonetti, M. J. S. Lowe, I. P. Bradley, Donald O. Thompson, Dale E. Chimenti
Publikováno v:
AIP Conference Proceedings.
Corrosion under insulation is a significant cause of pipeline failure in the oil and gas industry. This paper describes the initial developmental stages of a technique which uses the structure of an insulated pipeline as a coaxial waveguide to suppor
Autor:
R. E. Jones, F. Simonetti, M. J. S. Lowe, I. P. Bradley, Donald O. Thompson, Dale E. Chimenti
Publikováno v:
AIP Conference Proceedings.
Corrosion Under Insulation (CUI) is a significant cause of pipeline failure in the oil and gas industry. This paper describes the initial developmental stages of a technique which uses the structure of an insulated pipeline as a coaxial waveguide to
Autor:
R. E. Jones, E. E. Haller, D. M. Yamaguchi, Wladek Walukiewicz, Kin Man Yu, Joel W. Ager, S. X. Li, Hai Lu, William J. Schaff
Publikováno v:
AIP Conference Proceedings.
Capacitance‐voltage measurements using a liquid electrolyte as rectifying contact were used to provide definitive proof of p‐type activity beneath a surface inversion layer in Mg‐doped InN. Net acceptor concentrations in the low to mid 1019 cm
Autor:
William J. Schaff, H.C.M. van Genuchten, E. E. Haller, Wladek Walukiewicz, Zuzanna Liliental-Weber, R. E. Jones, Kin Man Yu, Hai Lu, Joel W. Ager, S. X. Li
Publikováno v:
Jones, R.E.; van Genuchten, H.C.M.; Yu, K.M.; Walukiewicz, W.; Li, S.X.; A ger III, J.W.; et al.(2008). Defect Doping of InN. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/2878v0bs
InN films grown by molecular beam epitaxy have been subjected to 2 MeV He+ irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films wi