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Low Temperature Photoluminescence Of GaAs/GaInP Heterostructures Measured Under Hydrostatic Pressure
Autor:
Jun'ichiro Nakahara, Yasuhiro Homma, Kazuo Uchida, A. D. Prins, Toshihiko Kobayashi, A. Nagata
Publikováno v:
AIP Conference Proceedings.
A study of 11 K photoluminescence measurements of metalorganic vapor phase epitaxy grown GaAs/GaInP quantum wells is reported for the first time at pressures up to ∼5 GPa. The use of low temperature allows us to study the true nature of a peak at