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Autor:
Huang Bin-Bin, Jiang Feng-Yi, Zhang Chao-Yu, Tang Yingwen, Wang Guang-Xu, Xiong Chuan-Bing, Huang Ji-Feng, Liu Jun-Lin
Publikováno v:
Acta Physica Sinica. 64:187801
At present, there are mainly two kinds of methods to prevent crack and reduce tensile stress of the silicon substrate GaN based light emitting diode (LED) epitaxial films: one is to use the patterned silicon substrate and the other is to grow a thick