Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Tae-Gyu Ryu"'
Autor:
Hyun-Jin Shin, Sunil Babu Eadi, Yeong-Jin An, Tae-Gyu Ryu, Do-woo Kim, Hi-Deok Lee, Hyuk-Min Kwon
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Tunneling field-effect transistors (TFETs) are a promising candidate for the next generation of low-power devices, but their performance is very sensitive to traps near the tunneling junction. This study investigated the effects of high-pres
Externí odkaz:
https://doaj.org/article/eba4b8afee364d54a4a80a2cea6a190d
Autor:
Hyun-Jin Shin, Sunil Babu Eadi, Seong-Hyun Kim, Tae-Gyu Ryu, Yeong-Jin An, Do-Woo Kim, Hi-Deok Lee, Hyuk-Min Kwon
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 679-686 (2022)
The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET). We demonstrated that the origin of LFN properties in pTFET c
Externí odkaz:
https://doaj.org/article/e32e4931dad04540bc33c6e6b0123f6c