Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Sihao, Xia"'
Publikováno v:
Journal of Materials Research and Technology, Vol 30, Iss , Pp 5512-5522 (2024)
The p-type doping process during the growth of AlGaN nanowires directly influences the optoelectronic properties of the related devices. However, research on the p-type ionization mechanism in AlxGa1-xN nanowires remains limited. In this work, we uti
Externí odkaz:
https://doaj.org/article/8eb01cb7fa1240779aaad4762ee87bbe
Publikováno v:
Results in Physics, Vol 53, Iss , Pp 106957- (2023)
Surface decoration with cesium on the photocathode is an effective method to reduce surface barriers and promote electron emission. In this study, we investigated the changes in surface properties of AlGaN nanowire coated with Cs atoms using first-pr
Externí odkaz:
https://doaj.org/article/4044c86469f248e09ba1df8ab84c1728
Publikováno v:
Journal of Colloid and Interface Science. 607:913-921
Two-dimensional (2D) semiconductors show novel electronic and optoelectronic applications due to their excellent performance. The van der Waals (vdW) heterostructures are also a new method for the design of low dimensional optoelectronic devices. How
Publikováno v:
International Journal of Energy Research. 45:7870-7883
Publikováno v:
Solar Energy. 214:189-195
Using first-principles calculation method, we investigate the possibility of Si-doped ZnO(0001) surface with Cs coating layer applied as the anode material of solar cell based on photon-enhanced thermionic emission (PETE) mechanism. The n-type doping
Publikováno v:
Solar Energy. 211:560-568
In this study, the first principle calculation is utilized to investigate the possibility of GaN to be applied as the anode of solar cells based on photon-enhanced thermionic emission (PETE). The results suggest that Si-doped GaN(0001) surface can ob
Publikováno v:
Journal of Colloid and Interface Science. 572:297-305
The influence of CO, CO2, H2O, H2 and CH4 adsorption on the stability and electronic properties of negative electron affinity (NEA) GaAs nanowire surfaces activated by Cs/O and Cs/NF3 are systematically investigated via first-principles. The calculat
Publikováno v:
Journal of Materials Science & Technology. 42:54-62
The exponential-doping GaN nanowire arrays (GaN NWAs) photocathode has a “light-trapping effect”, and the built-in electric field can promote the concentration of the photogenerated carrier center to the top surface of the nanowire. However, in t
Publikováno v:
Solar Energy. 194:510-518
An axially exponential-doping GaAs nanowire cathode is proposed as the cathode material of photon-enhanced thermionic emission (PETE) device. Two-type theoretical models are respectively developed based on the numerical solution of multi-dimensional
Publikováno v:
Physica B: Condensed Matter. 571:174-180
The adsorption of three gases on the wurtzite GaAs nanowires (100) surface are systematically studied via first principles. The optoelectronic properties of GaAs nanowires absorbed by CH 4 , H 2 and H 2 O are analyzed. The surface absorbed with H 2 O