Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Martin Albrecht"'
Autor:
Robert Schewski, M. Baldini, Andreas Fiedler, Klaus Irmscher, Detlef Klimm, Martin Albrecht, Günter Wagner
Publikováno v:
Journal of Materials Science. 51:3650-3656
Sn-doped β-Ga2O3 epitaxial layers have been grown on (100) β-Ga2O3 substrates by metal organic vapour-phase epitaxy. Triethylgallium (TEGa), molecular oxygen (O2) and tetraethyltin (TESn) were used as Ga, O and Sn precursors, respectively. Layers g
Publikováno v:
physica status solidi (a). 211:543-549
Among the transparent semiconducting oxides β-Ga2O3 is of high interest because of its wide-band gap of 4.8 eV and the corresponding transparency from deep ultraviolet to near infrared spectra. Here, we report on the preparation, structural and temp
Autor:
David Méndez, H. P. Strunk, Eva Monroy, Martin Albrecht, Ana M. Sanchez, Rafael García, D. Jalabert
Publikováno v:
physica status solidi c. 3:1400-1403
AlyGaxIn1–x–yN epilayers with diverse Al and In mole fractions have been grown by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire. Conventional transmission electron microscopy characterization reveals threading dislocations behavior as
Autor:
P. Wisniewski, Grzegorz Nowak, Tadeusz Suski, Michał Leszczyński, Izabella Grzegory, Robert Czernecki, Pawel Prystawko, J. Lehnert, Martin Albrecht, Piotr Perlin, S. Porowski
Publikováno v:
Journal of Crystal Growth. 231:352-356
The single crystals of GaN were grown at a high pressure of 10–20 kbar and a high temperature of 1500–1800°C. The crystals have the form of hexagonal platelets of size up to 100 mm 2 and dislocation density smaller than 10 3 cm −2 . These crys
Publikováno v:
Materials Science and Engineering: B. 80:313-317
InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects that l
Autor:
Grzegorz Nowak, Jan L. Weyher, Martin Albrecht, S. Porowski, Horst P. Strunk, Tadeusz Wosinski
Publikováno v:
Materials Science and Engineering: B. 80:318-321
Vickers diamond indentation at 370°C has been employed to introduce dislocations into the plate-like (000-1) N-polar GaN single crystals. It has been established that using standard Vickers diamond indenter, well-defined ‘rosettes’ of defects ar
Autor:
Yu. V. Melnik, Andrey E. Nikolaev, Irina P. Nikitina, Martin Albrecht, Horst P. Strunk, Vladimir Dmitriev
Publikováno v:
physica status solidi (a). 176:453-458
We analyse the dislocation distribution in GaN and AlN bulk crystals by transmission electron microscopy and X-ray diffraction. The crystals are grown by hydride vapour phase epitaxy onto 6H-SiC[0001] and Si(111) substrates. Two essentially different
Autor:
Martin Albrecht, Horst P. Strunk, B. Neubauer, Martin Stutzmann, Andreas Rosenauer, Oliver Ambacher, Dagmar Gerthsen
Publikováno v:
Materials Science and Engineering: B. 59:182-185
Composition fluctuations in Al x Ga 1 −x N-layers ( x =0.25 and 0.35) are investigated on an atomic scale by high-resolution transmission electron microscopy (HRTEM). The samples were grown by plasma induced molecular beam epitaxy on Al 2 O 3 (0001
Autor:
Martin Albrecht, B. Jahnen, Horst P. Strunk, T. Remmel, U. Hörmann, Silke Christiansen, W. Dorsch
Publikováno v:
Scopus-Elsevier
Using examples from SiGe solid solutions grown onto (001)Si substrates from metallic solutions (liquid phase epitaxy) we discuss the different mechanisms by which misfitting systems can relax the strain caused by pseudomorphic growth. We treat elasti
Autor:
Konstantin Vassilevski, Giancarlo Salviati, C. Zanotti-Fregonara, V. A. Dmitriev, M Mayer, M. Guzzi, Horst P. Strunk, Martin Albrecht, Nicola Armani, Y. G. Shreter, Yu. V. Melnik
Publikováno v:
Scopus-Elsevier
Defect related states and excitonic transitions in epitaxial GaN have been studied by combining cathodoluminescence and transmission electron microscopy. A series of deep revels with energies at about 2.4, 2.6 and 2.8 eV has been found by low tempera