Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Nakanishi A"'
Publikováno v:
Thin Solid Films. 721:138551
The different interface width and alloy composition of the Fe-on-Ti and Ti-on-Fe interfaces has been concluded recently from conversion-electron Mossbauer spectroscopy and x-ray reflectivity measurements of Ti/57Fe/Ti trilayers. Now it is shown by Mo
Publikováno v:
Thin Solid Films. 519:4487-4490
We have investigated the improvement of the corrosion resistance of metal products using a SiCN coating deposited by hot-wire chemical vapor deposition (HWCVD). We used brass as a metal product. SiCN coated brass was immersed in a 10% sulfuric acid s
Publikováno v:
Thin Solid Films. 515:5867-5870
Selenization growth of purely single-phase, polycrystalline CuIn 1 − x Ga x Se 2 (0 ≤ x ≤ 1) alloy films was demonstrated using a less-hazardous metalorganic selenide, diethylselenide [(C 2 H 5 ) 2 Se: DESe], without additional thermal annealin
Autor:
T. Baba, Paul Fons, Hachiro Nakanishi, T. Deguchi, S. Niki, T. Kojima, N. Tsuchimochi, Koji Matsubara, Akimasa Yamada, Ralf Hunger, Keiichiro Sakurai
Publikováno v:
Thin Solid Films. :6-10
Recently, we have developed an improved three-stage growth method by simultaneously using a pyrometer and a thermocouple, to accurately control thickness and composition during growth of CuInGaSe 2 (CIGS). As a result, we have obtained solar cells th
Publikováno v:
Thin Solid Films. 274:113-119
The growth and properties of phosphorus-doped microcrystalline silicon (μc-Si) films deposited by cathode-type radio frequency glow discharge were investigated. Doping effects on deposition rate, crystallinity, grain size and electrical properties w
Publikováno v:
Thin Solid Films. 256:234-239
X-ray diffraction (XRD) and spectroscopic ellipsometry measurements have been performed to study the crystalline structure of polycrystalline silicon films deposited by cathode-type r.f. glow discharge. Ratios of XRD peak intensities are used to desc