Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Martin Albrecht"'
Autor:
Mariia Anikeeva, Ewa Grzanka, Martin Albrecht, Marta Sawicka, Tobias Schulz, Torsten Ernst, Grzegorz Staszczak, Czeslaw Skierbiszewski, Joanna Moneta, Tadeusz Suski, Marcin Siekacz, P. Wolny, A. Feduniewicz-Żmuda
Publikováno v:
Superlattices and Microstructures. 133:106209
In this work we investigate InGaN/GaN short period superlattices (SPSLs) grown on (0001) GaN and on relaxed In0.2Ga0.8N buffers with varying degree of plastic relaxation. The SPSLs were fabricated by plasma assisted molecular beam epitaxy (PAMBE). De
Publikováno v:
Superlattices and Microstructures. 46:277-285
Self-assembled and ordered silicon and germanium nanowires grown by physical vapor deposition (PVD) via vapor–liquid–solid (VLS) mechanism are presented. The morphology of the nanowires has been investigated by scanning electron microscopy (SEM)
Autor:
Esther Baumann, Fabrizio R. Giorgetta, Laurent Nevou, Martin Albrecht, L. Doyennette, Maria Tchernycheva, T. Remmele, Edith Bellet-Amalric, Sylvain Leconte, Fabien Guillot, F. H. Julien, Eva Monroy, Daniel Hofstetter
Publikováno v:
Superlattices and Microstructures. 40:418-425
In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector (QWIP) structures, including the Si-doped GaN/AlN short-period superlattice of the active region, conductive AlGaN claddings and integ
Autor:
Maria Tchernycheva, Laurent Nevou, Eva Monroy, Martin Albrecht, L. Doyennette, F. H. Julien, Fabien Guillot, T. Remmele, Sylvain Leconte, Raffaele Colombelli, E. Warde
Publikováno v:
Superlattices and Microstructures. 40:412-417
We present a systematic investigation of ultrathin single and coupled GaN/AlN quantum wells grown by molecular beam epitaxy for applications to unipolar devices. Narrow Lorentzian-shaped intersubband absorptions are demonstrated tunable at telecommun