Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Bruce A. Smith"'
Autor:
Bruce W. Smith, Zac Levinson
Publikováno v:
SPIE Proceedings.
Next-generation EUV lithography systems will use anamorphic optics to achieve high-NA. The well-known Zernike circle polynomials do not describe the sixteen primary aberrations of these anamorphic optical systems though. We propose to use a basis whi
Publikováno v:
SPIE Proceedings.
The use of optical proximity correction (OPC) demands increasingly accurate models of the photolithographic process. Model building and inference techniques in the data science community have seen great strides in the past two decades which make bett
Publikováno v:
SPIE Proceedings.
As EUV lithography attempts to outperform other lithographical methods to the sub-14 nm node, the demand for a larger NA traditionally dominates the drive for scaling. There are, however, many challenges to overcome in order to accomplish this [1]. D
Publikováno v:
SPIE Proceedings.
EUV lithography is likely more sensitive to drift from thermal and degradation effects than optical counterparts. We have developed an automated approach to photoresist image-based aberration metrology. The approach uses binary or phase mask targets
Autor:
Chris Maloney, Eric Hendrickx, Rik Jonckheere, Germain Fenger, Bruce W. Smith, Ardavan Niroomand, James Word, Gian Lorusso
Publikováno v:
SPIE Proceedings.
As EUV Lithography (EUVL) continues to evolve, it offers a possible solution to the problems of additional masks and lithography steps that drive up the cost and complexity of 193i multiple patterning. EUVL requires a non-telecentric reflective optic
Autor:
Bruce W. Smith
Publikováno v:
SPIE Proceedings.
The optimization of illumination in optical lithography has been central to the progress toward λ/5 resolution now commonplace. The tailoring of source shapes to meet increasing demands of imaging has been commercially practiced for over twenty year
Publikováno v:
SPIE Proceedings.
The roughness present on the sidewalls of lithographically defined patterns imposes a very important challenge for advanced technology nodes. It can originate from the aerial image or the photoresist chemistry/processing [1]. The latter remains to be
Publikováno v:
SPIE Proceedings.
Historically IC (integrated circuit) device scaling has bridged the gap between technology nodes. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Exemplifying this trend a
Autor:
Bruce W. Smith, Monica Kempsell Sears
Publikováno v:
SPIE Proceedings.
As semiconductor nanolithography is pushed to smaller dimensions, process yields can suffer from three dimensional sub-wavelength imaging effects. Mask topography can influence the propagating diffracted field causing errors such as pitch dependent d
Publikováno v:
SPIE Proceedings.
Line edge roughness (LER) is a common problem to most lithography approaches and is seen as the main resolution limiter for advanced technology nodes1. There are several contributors to LER such as chemical/optical shot noise, random nature of acid d