Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jacob H"'
Publikováno v:
SPIE Proceedings.
The economic and energy efficiency promise of solid state lighting drive a continuous need to reduce the cost and improve the efficiency of visible LEDs. Current III-N LED manufacturing is dominated by non-native substrate approaches which result in
Publikováno v:
SPIE Proceedings.
Switches are at the heart of all pulsed power and directed energy systems, which find utility in a number of applications. At present, those applications requiring the highest power levels tend to employ spark-gap switches, but these suffer from rela
Autor:
Xiangyu Yang, Jacob H. Leach, Mo Wu, Peter Händel, Veena Misra, Ümit Özgür, C. Y. Zhu, Cemil Kayis, Hadis Morkoç, Xing Li
Publikováno v:
SPIE Proceedings.
Generation-recombination processes in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with HfAlO gate dielectric have been investigated through low-frequency phase-noise. Some devices tested exhibited noise spe
Publikováno v:
SPIE Proceedings.
The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on Cl 2 /Ar/SiCl 4 gas mixture was perfo
Publikováno v:
SPIE Proceedings.
The electric fields present in a heterostructure field effect transistor (HFET) give rise to large densities of hot electrons and hot phonons not in equilibrium with the lattice (thus the term "hot"). Hot electrons give rise to an accumulation of hot
Autor:
Edward A. Preble, Tanja Paskova, Xing Li, Xianfeng Ni, Hadis Morkoç, Jacob H. Leach, Keith R. Evans, N. Biswas, Menghao Wu, Ümit Özgür
Publikováno v:
SPIE Proceedings.
Bulk GaN substrates promise to bring the full potential of nitride-based devices to bear since they offer a low thermal and lattice mismatched alternative to foreign substrates for epitaxial growth. However, due to the high cost and low availability
Publikováno v:
SPIE Proceedings.
The promise of InAlN-based HFET devices stems from the relatively large band and spontaneous polarization discontinuities and at the interface and the lack of misfit strain when grown lattice matched to GaN. However, there still exists some question
Publikováno v:
SPIE Proceedings.
Near lattice matched Al 0.81 In 0.19 N/GaN heterojunction structures are compared with conventional Al 0.3 Ga 0.7 N/GaN heterojunctions in terms of the sheet density and mobility and their dependence on barrier and spacer layer parameters. With the i
Publikováno v:
SPIE Proceedings.
GaN-based heterojunction field effect transistors (HFETs) are strong contenders to replace vacuum tubebased devices in the high power, and high frequency arena. However, the piezoelectric stain, exploited to generate high density two-dimensional elec
Publikováno v:
SPIE Proceedings.
Compound semiconductors based on GaN have multiple functional applications. Useful compositions include GaN, and ternary and quaternary compositions of (AlGaIn)N. Defects arising from lattice mismatch, point defects, or impurities may act as electric