Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kristel Fobelets"'
Publikováno v:
Solid-State Electronics. 83:107-112
The output power of a discrete assembly of n-Si–p-Si1−xGex (0 ⩽ x ⩽ 0.4) thermoelectric generators is measured as a function of load resistance. The influence of Ge content and nanowire structures on the performance of thermoelectric devices
Publikováno v:
Solid-State Electronics. 53:626-629
The low frequency (1/f) noise characteristics of Schottky-gated strained-Si n-channel modulation doped field effect transistors have been investigated as a function of Ge concentration for different virtual substrates. The gate voltage dependence of
Publikováno v:
Solid-State Electronics. 51:749-756
A novel 3D field effect transistor on SOI – screen-grid FET (SGrFET) – is proposed and an analysis of its DC behaviour is presented by means of 2D TCAD analysis. The novel feature of the SGrFET is the design of 3D insulated gate cylinders embedde
Autor:
K. Michelakis, S. Despotopoulos, A. Vilches, Kristel Fobelets, Christos Papavassiliou, Chris Toumazou
Publikováno v:
Solid-State Electronics. 49:591-594
The authors present the first to their knowledge monolithic inverting current mirror fabricated on heterostructure Si/SiGe technology, using buried silicon channel depletion-mode MOSFET transistors. Characterisation results both at DC and at high fre
Autor:
W. Jeamsaksiri, V. Gaspari, C. Papavasilliou, J.E. Velazquez-Perez, U. Konig, Kristel Fobelets, Thomas Hackbarth, T. Vilches, K. Michelakis
Publikováno v:
Solid-State Electronics. 48:1401-1406
The measured performance of sub-micron Si:SiGe Schottky gated HFETs is compared to Si nMOSFETs. To allow an up-to-date comparison between Si and strained-Si FETs, the different device types have been studied in their respective technologies. RF perfo
Autor:
U. Konig, A. Vilches, D.G. Haigh, K. Michelakis, Christos Papavassiliou, Kristel Fobelets, T Hackbath
Publikováno v:
Solid-State Electronics. 48:1423-1431
In this paper, intrinsic device parameters, directly extracted from buried-channel n-HMODFET devices biased at micropower supply levels are presented. Sub-threshold region peaks in plots of intrinsic transit frequency and transconductance vs. bias cl
Publikováno v:
Solid-State Electronics. 47:1289-1295
The performance of surface channel MOSFET devices is dependent on the Si/SiO 2 interface roughness. This paper examines the performance demonstrated by strained Si/SiGe heterojunction n-channel MOSFET devices (HNMOSFETs) fabricated on ultra-low press
Publikováno v:
Solid-State Electronics. 46:2241-2245
This paper reports on the effects of backgating on the sub-threshold characteristics of Si:SiGe n-channel heterojunction field effect transistors. The layer structure is optimised for small sub-threshold slope and negligible threshold voltage shift a