Zobrazeno 11 - 20
of 829
pro vyhledávání: '"01"'
Autor:
Olivier Faynot, Mikael Casse, Gilles Reimbold, Marcelo Antonio Pavanello, Sylvain Barraud, Bruna Cardoso Paz, Maud Vinet
Publikováno v:
Solid-State Electronics. 159:83-89
This work evaluates the operation of p-type Si0.7Ge0.3-On-Insulator (SGOI) nanowires from room temperature down to 5.2 K. Electrical characteristics are shown for long channel devices comparing narrow Ω-gate to quasi-planar MOSFETs (wide fin width).
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2019, 159, pp.90-98. ⟨10.1016/j.sse.2019.03.042⟩
Solid-State Electronics, 2019, 159, pp.90-98. ⟨10.1016/j.sse.2019.03.042⟩
Solid-State Electronics, Elsevier, 2019, 159, pp.90-98. ⟨10.1016/j.sse.2019.03.042⟩
Solid-State Electronics, 2019, 159, pp.90-98. ⟨10.1016/j.sse.2019.03.042⟩
GDNMOS (Gated Diode merged NMOS) and GDBIMOS (Gated Diode merged BIMOS) were fabricated using the 28 nm node ultra-thin film UTBB FD-SOI high-k metal gate CMOS technology. The anode current and voltage were measured and simulated for a high number of
Publikováno v:
Solid-State Electronics
Digibug. Repositorio Institucional de la Universidad de Granada
instname
Digibug. Repositorio Institucional de la Universidad de Granada
instname
We thoroughly compare the DC electrical behavior of n-MOS transistors based on Si nanowires with 〈 1 0 0 〉 and 〈 1 1 0 〉 channel orientations by means of Multi-Subband Ensemble Monte Carlo simulations. We find that the drain current depends o
Autor:
S. Routray, Trupti Ranjan Lenka
Publikováno v:
Solid-State Electronics. 159:142-149
The innovative contribution of this paper is to derive polarization charges in hexagonal and triangular GaN/InGaN/GaN core/shell/shell nanowire solar cells considering effect of degree of strain relaxation (R) and appropriate stiffness coefficients.
Publikováno v:
Solid-State Electronics, 159
Quantum drift diffusion corrections, models for the one- and two-dimensional density of states, a non-local model for source-to-drain tunneling, and a simple ballistic mobility model are jointly used to simulate I D V GS -characteristics of scaled II
Autor:
V.I. Vdovin, V.A. Antonov, M.A. Ilnitsky, Konstantin V. Rudenko, A. V. Miakonkikh, Vladimir Popov, I.E. Tyschenko
Publikováno v:
Solid-State Electronics. 159:63-70
The formation of a multi-crystalline HfO2 film, containing the ferroelectric phase OII (Pmn21) after a high-temperature annealing at 1100 °C, was experimentally observed by HREM for the first time in silicon-on-sapphire (SOS) structures obtained by
Publikováno v:
Solid-State Electronics. 159:129-134
An analytical model for threshold voltage of Ge dual material gate (DMG) FinFET by self consistently solving 3D Poisson’s and 2D Schrodinger’s equation is developed. The model includes the quantum effects as well. The potential distribution in th
Autor:
Maria Androulidaki, George Deligeorgis, Alexandros Georgakilas, Antonis Stavrinidis, George Konstantinidis, Katerina Tsagaraki, G. Doundoulakis, A. Adikimenakis
Publikováno v:
Solid-State Electronics. 158:1-10
The exploitation of the two-dimensional electron gas (2DEG) channel of an AlN/GaN/AlN double barrier heterostructure, for High Electron Mobility Transistors (HEMTs) with metal–oxidesemiconductor (MOS) tri-gate around a fin-shaped channel (MOS-FinHE
Publikováno v:
Solid-State Electronics. 158:11-15
This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA) MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data
Autor:
Renan Trevisoli, Michelly de Souza, Rodrigo T. Doria, Marcelo Antonio Pavanello, Sylvain Barraud
Publikováno v:
Solid-State Electronics. 158:37-45
The aim of this work is to propose and qualify a systematic method for parameters extraction of Junctionless Nanowire Transistors (JNTs) based on drain current measurements and compact modeling. As junctionless devices present a different conduction