Zobrazeno 1 - 10
of 36
pro vyhledávání: '"01"'
Autor:
Min Song Lin, Heng-Tung Hsu, Yueh Chin Lin, Simon M. Sze, Ting Jui Huang, Edward Yi Chang, Jing Neng Yao
Publikováno v:
Solid-State Electronics. 157:55-60
In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power logic applications. The fabricated device demonstrated good electri
Publikováno v:
Solid-State Electronics. 151:60-64
In order to alleviate the negative impacts of high temperature (850 °C) annealing on high electron mobility transistor (HEMT) technology, a process required only low temperature annealing (less than 600 °C) was introduced to form ohmic contact to H
Autor:
Andrew J. Pope, Chad A. Stephenson, Albert Colon, Albert G. Baca, Michael S. Van Heukelom, Brianna Klein, Erica A. Douglas, Anna Tauke-Pedretti
Publikováno v:
Solid-State Electronics. 151:47-51
Al0.26Ga0.74N/GaN on SiC lateral Schottky diodes were fabricated with variable anode-to-cathode spacing and were analyzed for blocking and on-state device performance. On-chip normally-on High Electron Mobility Transistor (HEMT) structures were also
Publikováno v:
Solid-State Electronics. 147:1-5
We demonstrated an Au-free ohmic contact for un-doped AlGaN/GaN HEMTs with Ti/Al/Ti/TiW metal structure. The Au-free ohmic contact was fabricated by pre-ohmic recess etching and low annealing temperature. The contact characteristics of the Ti/Al/Ti/T
Autor:
Ali A. Rezazadeh, Mohammad A. Alim
Publikováno v:
Solid-State Electronics. 147:13-18
Detailed analysis of device behaviour on the zero-temperature coefficient (ZTC) points for microwave GaAs based high-electron mobility transistor is presented by means of on-wafer measurements over the temperatures between −40 and 150 °C. This zer
Publikováno v:
Solid-State Electronics. 186:108138
Radio-frequency (RF) high-power high electron mobility transistors (HEMTs) are fabricated with multiple fingers and larger widths to increase the output delivered power. The increased power handling capability is a consequence of the increased capabi
Autor:
Yaopeng Zhao, Yunlong He, Chong Wang, Xue-Feng Zheng, Kai Liu, Xiaohua Ma, Wei Mao, Zeyang Huang, Yue Hao, Ang Li
Publikováno v:
Solid-State Electronics. 186:108109
In this paper, enhancement-mode AlGaN/GaN p-type GaN cap layer high electron mobility transistors (p-GaN HEMTs) with Ti/Au gate metal are fabricated and electrically characterized. The post gate annealing (PGA) treatment at 300 °C for 10 min is util
Publikováno v:
Solid-State Electronics. 146:44-49
Linear and nonlinear characteristics of a 0.5 μm × (2 × 100) μm gate double heterojunction AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor have been investigated using a two-tone intermodulation distortion (IMD) measurement tec
Publikováno v:
Solid-State Electronics. 146:9-12
We demonstrate an electrically tunable terahertz (THz) modulator based on the single channel AlGaN/GaN high electrons mobility transistor (HEMT). HEMT integrated in the modulator structures is used to change the conductance of the modulator by the ap
Autor:
Dipendra Singh Rawal, Robert Laishram, Amit Malik, Seema Vinayak, R.K. Bag, Chandan Sharma, Rajesh K. Sharma
Publikováno v:
Solid-State Electronics. 142:8-13
This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a