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pro vyhledávání: '"01"'
Autor:
R. Rodriguez, Javier Martin-Martinez, Mireia Bargallo Gonzalez, M. Pedro, Francesca Campabadal, Montserrat Nafria
Publikováno v:
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname
In this work, an automatic and flexible measurement setup, which allows a massive electrical characterization of single RRAM devices with pulsed voltages, is presented. The evaluation of the G-V maps under single-pulse test-schemes is introduced as a
Publikováno v:
Solid-State Electronics. 157:34-41
Tunable components and circuits, allowing for the fast switching between the states of operation, are among the basic building blocks for future communications and other emerging applications. Based on the previous thorough study of graphene based re
Autor:
Byung-Gook Park, Jong-Ho Bae, Suhwan Lim, Kyu-Bong Choi, Sung Yun Woo, Sung-Tae Lee, Chul-Heung Kim, Dongseok Kwon, Jong-Ho Lee, Won-Mook Kang
Publikováno v:
Solid-State Electronics. 156:23-27
We fabricate a floating fin-body MOSFET with charge trap layer on p-type (1 0 0) Si wafer and investigate the characteristics of the fabricated device as a synaptic device. To implement the long-term potentiation (LTP) and long-term depression (LTD),
Publikováno v:
Solid-State Electronics. 156:79-86
In this paper, we propose a method to analytically solve some types of DC lumped-parameter equivalent circuit models for solar cells with S-shaped I-V characteristics measured under illumination. Based on the models proposed previously by other autho
Publikováno v:
Solid-State Electronics. 155:159-162
Optical communications is the linchpin of modern communications delivering vast majority of the online traffic worldwide at the terabit-per-second rate. However, an exponential growth of this traffic requires proper increase in transmission rate, whi
Autor:
Paul M. Solomon
Publikováno v:
Solid-State Electronics. 155:82-92
Digital logic technology has been extraordinarily successful and has been fueled by incredible gains in integration density and performance achieved over the years following Moore’s law. This has led to societal changes where more and more everyday
Publikováno v:
Solid-State Electronics. 155:44-48
Comprehensive Testing of Microwave Monolithic Integrated Circuits (MMICs) and Very Large Scale Integrated (VLSI) circuits is a problem of growing sophistication and importance. A commensurate problem involves the increasing relevance of hardware secu
Publikováno v:
Solid-State Electronics. 155:57-64
Power grids are distributed over vast geographical areas and have sophisticated multilayered architecture. The structure of the grid distribution layer is often poorly documented and sometimes unknown, presenting additional challenges to the developm
Publikováno v:
Solid-State Electronics. 154:16-19
We propose a method for reconfigurable logic using a single magnetic tunnel junction (MTJ) as the main computing element in the single-gate architecture. The introduction of the MTJ to reconfigurable computing provides advantages in layout efficiency
Publikováno v:
Solid-State Electronics. 152:65-71
Process variability has been a challenge for advanced transistor technology nodes for logic applications. With the advent of multi-gate architecture, Metal Gate granularity (MGG) has become a significant source of variability. Traditional ways of var