Zobrazeno 1 - 10
of 101
pro vyhledávání: '"01"'
Autor:
Qing-Tai Zhao, Qinghua Han, Paulus Aleksa, Siegfried Mantl, Juergen Schubert, Thomas Carl Ulrich Tromm
Publikováno v:
Solid-State Electronics. 159:71-76
Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon be
Publikováno v:
Solid-State Electronics, 159
Quantum drift diffusion corrections, models for the one- and two-dimensional density of states, a non-local model for source-to-drain tunneling, and a simple ballistic mobility model are jointly used to simulate I D V GS -characteristics of scaled II
Autor:
Cezhou Zhao, Liu Qihan, Wangying Xu, Jiahuan He, Chun Zhao, Li Yang, Zongjie Shen, Yuxiao Fang, Yanfei Qi, Tianshi Zhao, Ruowei Yi
Publikováno v:
Solid-State Electronics. 158:28-36
We reported a low-temperature solution-processed method for the fabrication of AlOx thin films in the memory device. The detailed study is carried out to figure out the effect of varying annealing temperatures (150, 200, 250, 300, and 350 °C) on res
Autor:
Matthias Ernst, Diana Hößler
Publikováno v:
Solid-State Electronics. 158:51-58
Very thin plasma enhanced chemical vapor deposition (PECVD) titanium (Ti) of 6 ± 1 nm was characterized on doped unstructured and structured Si substrate. Based on the current state of the art, we utilized the Design of Experiment (DoE) methodology,
Autor:
Jeong-Yoon Lee, Dong-Hoon Lee, Young Jin Koh, Young-Su Jeong, Kyeong-Keun Choi, In-Ho Bae, Min-Jae Kang, Eugene Chong, Jong-Seon Kim, Jin Young Ryu, Jinho Park
Publikováno v:
Solid-State Electronics. 156:1-4
We report on the effect of the beveled mesa angle on the performance of 4H-SiC avalanche photodiodes (APDs) with various active areas between 100 and 500 µm. The mesa structure was beveled with a smaller slope angle by using a photoresist reflow tec
Autor:
Hajdin Ceric, Bernhard Stampfer, Michael Waltl, Jong-Hyun Lee, Ki-Sik Im, Tibor Grasser, A. Grill, Clemens Ostermaier
Publikováno v:
Solid-State Electronics. 156:41-47
Charge trapping effects are considered as one of the most severe reliability issues in gallium nitride (GaN)/aluminium gallium nitride (AlGaN) metal-insulator-semiconductor HEMTs (MISHEMTs). Thus, the identification of the origin and the physical pro
Publikováno v:
Solid-State Electronics. 156:73-78
Prior work on Silicon Carbide (SiC) power devices has been silent on the exact procedure to be employed for designing the Floating Field Rings (FFRs) meant for raising avalanche breakdown voltage of these devices. On the other hand, prior procedures
Publikováno v:
Solid-State Electronics. 156:62-72
The effect of a thin pentacene anode buffer layer on the performance of small-molecule organic solar cells (OSCs) was experimentally investigated primarily from morphological and crystallographic viewpoints. The OSC had a structure of indium-tin oxid
Autor:
Sang Yeol Lee, Jin Young Hwang
Publikováno v:
Solid-State Electronics. 153:93-98
Amorphous silicon doped zinc tin oxide (a-SZTO) thin film transistors (TFTs) have been fabricated by RF-magnetron sputtering at room temperature. The effect of different channel thickness on the electrical properties and the stability of a-SZTO TFTs
Autor:
Xuexi Gao, Shuhong Li, Wenlian Li, Quli Fan, Yangyang Guo, Wenjun Wang, Yunlong Liu, Qingru Wang, Tingting Liu, Qinglin Wang
Publikováno v:
Solid-State Electronics. 153:46-51
Organic Light-Emitting Diodes (OLEDs) with graphene oxide (GO) as hole injection layer (HIL) have been demonstrated. The OLED devices possess structures of ITO/GO(x nm)/NPB(40 nm)/Alq3(70 nm)/LiF(0.5 nm)/Al(100 nm), it is found that as the thickness