Zobrazeno 1 - 10
of 60
pro vyhledávání: '"01"'
Autor:
Ao Zhang, Jianjun Gao
Publikováno v:
Solid-State Electronics. 150:45-50
A new direct extraction method to determine the parasitic capacitances for HBTs is presented in this paper. The main advantage is that base parasitic capacitance Cpb can be extracted by using three different size HBTs with the same pad profile. This
A novel charge recycle read write assist technique for energy efficient and fast 20 nm 8T-SRAM array
Publikováno v:
Solid-State Electronics. 148:43-50
The read instability of conventional 6T-SRAM cell has made the 8T-SRAM cell a substitute for high data reliability. But the single ended nature of read operation demands a complete Vdd swing of high capacitive read bit lines leading to large energy c
Autor:
Xu Zhiyuan, Xin Tong, Lanlan Yang, Zhuo Yang, Zongqing Li, Zhu Yuanzheng, Zhang Xiaoshuang, Jianhui Wu, Weifeng Sun, Wu Qixiang, Siyang Liu
Publikováno v:
Solid-State Electronics. 148:70-74
In this letter, a novel Superjunction Metal-Oxide -Semiconductor Field Effect Transistor with wave-type field limiting ring (WFLR-SJ-MOSFET) is proposed to improve the di/dt robustness of body diode reverse recovery. When SJ-MOSFET body diode goes th
Publikováno v:
Solid-State Electronics. 147:63-77
In this paper, versatile triple-level cell (TLC) NAND flash memory control with four proposed techniques, Read-Hot/Cold Migration, Read Voltage Control (RVC), Edge Word-Line Protection (EWLP), and Worst Page Detection (WPD), is proposed for data cent
Autor:
Ali A. Rezazadeh, Mohammad A. Alim
Publikováno v:
Solid-State Electronics. 147:13-18
Detailed analysis of device behaviour on the zero-temperature coefficient (ZTC) points for microwave GaAs based high-electron mobility transistor is presented by means of on-wafer measurements over the temperatures between −40 and 150 °C. This zer
Publikováno v:
Solid-State Electronics. 147:35-38
We propose a specialized gate-drain separation structure for use in investigation of the dynamic behavior of the thermal transport characteristics in AlGaN/AlN/GaN heterojunction transistors. Using this structure, the influence of the two-dimensional
Publikováno v:
Solid-State Electronics. 146:1-8
In this paper, a novel eight-parameter empirical nonlinear current-voltage (I-V) model for gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. A hyperbolic sine function is introduced in this model to describe the transfer
Publikováno v:
Solid-State Electronics. 144:33-38
A new integration method is presented for the extraction of the parameters of a single exponential diode model with series resistance from the measured forward I-V characteristics. The extraction is performed using auxiliary functions based on the in
Publikováno v:
Solid-State Electronics. 142:47-51
The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC
Publikováno v:
Solid-State Electronics. 140:23-28
In order to enhance specific on-resistance (Ron,sp), the trench gate structure was also introduced into 4H-SiC MOSFET as Si MOSFET. But the 4H-SiC trench gate has worse off-state characteristics than the Si trench gate due to the incomplete gate oxid